High-efficiency all-fluorescent white organic light-emitting diode based on TADF material as a sensitizer.

The use of TADF materials as both sensitizers and emitters is a promising route to achieve high-efficiency all-fluorescent white organic light-emitting diodes (WOLEDs). In this study, the thermally-activated delayed-fluorescent (TADF) material DMAC-TRZ (9,9-dimethyl-9,10-dihydroacridine-2,4,6-triphenyl-1,3,5-triazine) was selected as a sensitizer for the conventional fluorescent emitter DCJTB (4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran), which was co-doped in a wide bandgap host of DPEPO (bis[2-(diphenylphosphino)phenyl]ether oxide) to fabricate WOLEDs. For the emitting layer of DPEPO:DMAC-TRZ:DCJTB, the DPEPO host can dilute the exciton concentration formed on the DMAC-TRZ sensitizer, which benefits the suppression of exciton quenching. The effect of the doping concentration of DCJTB on the carrier recombination and energy transfer process was investigated. With an optimized doping concentration of DCJTB as 0.8%, highly efficient WOLED was achieved with a maximum external quantum efficiency (EQE), power efficiency (PE), and current efficiency (CE) of 11.05%, 20.83 lm W-1, and 28.83 cd A-1, respectively, corresponding to the Commission Internationale de I' Eclairage (CIE) coordinates of (0.45, 0.46). These superior performances can be ascribed to the fact that the hole-trapping effect of the emitter and Dexter energy transfer (DET) from sensitizer to emitter can be suppressed simultaneously by the extremely low doping concentration.

High efficiency and low operating voltage yellow phosphorescent organic light-emitting diodes with a simple doping-free structure.

Yellow phosphorescent organic light-emitting diodes (PhOLEDs) with high efficiency and a low operating voltage were reported through using a simple doping-free structure. The structure of the PhOLEDs was ITO/C60/MoO3/mCP/PO-01-TB/PO-T2T/Liq/Al. The np-type C60/MoO3 heterojunction acted as hole injection layer, and the ultrathin PO-01-TB layer (0.1 nm) was inserted at the interface between mCP and PO-T2T to serve as yellow phosphorescent emitter. Detailed investigation suggested that the complete energy transfer occurred from the mCP/PO-T2T interfacial exciplex to yellow PO-01-TB. Furthermore, the np-type C60/MoO3 heterojunction could supply more free charge carriers, giving rise to further enhanced PhOLED efficiency. By adjusting the thickness of the C60/MoO3 heterojunction, a yellow PhOLED with a power efficiency of 71.6 lm W-1 was demonstrated with an extremely low operating voltage of 3.79 V at 1000 cd m-2.